Datasheet Summary
ADVANCED INNEFWORPRMOADTIUOCNT
Product Summary
BVDSS -20V
RDS(ON) Max
36m @ VGS = -4.5V 60m @ VGS = -2.5V
ID TA = +25°C
-5.3A -3.9A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
POWERDI3333-8 (Type UXB)
Pin 1
S1 G1S2G2
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Features
- Dual P-Channel MOSFET
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free &...