Datasheet Summary
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -20V
RDS(ON) Max
38mΩ @ VGS = -4.5V 56mΩ @ VGS = -2.5V
ID Max TA = +25°C
-5.4A -4.4A
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
- Backlighting
- Power management functions
- DC-DC converters
Features and Benefits
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- For...