Datasheet Summary
Product Summary
BVDSS -20V
RDS(on)
700mΩ @ VGS = -4.5V 900mΩ @ VGS = -2.5V 1300mΩ @ VGS = -1.8V
ID TA = +25°C
-0.5A -0.48A -0.4A
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
- DC-DC Converters
- Load Switch
- Power Management Functions
SOT523
P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
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