* Low RDS(ON)
* Ensures On State Losses are Minimized
* Small Form Factor Thermally Efficient Package Enables Higher Density End Products
* Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product
* 100% Unclamped Inductive Switching (Test in Producti
DMP3007SCGQ Datasheet (442.39 KB)
DMP3007SCGQ
442.39 KB
30v p-channel mosfet.
ADVANCE INFORMATION DMP3007SCGQ 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -30V RDS(ON) Max 6.8mΩ @ VGS = -10V 13mΩ @ VGS = -4.5V.
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