Datasheet Summary
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -30V
RDS(ON) max
14mΩ @ VGS = -10V 25mΩ @ VGS = -4.5V
ID TA = +25°C
-10.5A -8A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Applications
- Load Switch
- Power Management Functions
- DC-DC Converters
Features and Benefits
- Low On-Resistance
- Low Input Capacitance
- Low Input/Output Leakage
- 100% Unclamped Inductive Switching (Test in Production)
- Ensures More Reliability
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
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