Datasheet Summary
Product Summary
BVDSS -30V
RDS(on) Max 12mΩ @ VGS = -10V 21mΩ @ VGS = -4.5V
ID Max TA = +25°C
-10.5A
-8.0A
P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- ESD Protected Gate
- 100% Unclamped Inductive Switching (UIS) Test in Production
- Ensures More Reliable and Robust End Application
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local...