Datasheet Summary
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -30V
RDS(ON) max
48mΩ @ VGS = -10V 57mΩ @ VGS = -4.5V 80mΩ @ VGS = -2.5V
ID TA = +25°C
-4.8A -4.4A -3.7A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
- DC-DC Converters
- Power Management Functions
- Backlighting
Features
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to...