Datasheet Summary
AADDVVAANNCCEEDDI INFNFOORRMMAATITIOONN
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -30V
RDS(ON) Max
90mΩ @ VGS = -10V 134mΩ @ VGS = -4.5V
ID TA = +25°C
-3.3A -2.5A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
- DC-DC Converters
- Power Management Functions
Features
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device...