Datasheet Summary
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -30V
RDS(ON) Max
0.9Ω @ VGS = -10V 1.7Ω @ VGS = -4.5V
ID TA = +25°C
-0.58A -0.42A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Applications
- DC-DC converters
- Power management functions
SOT23
Features
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- The DMP31D7LQ is suitable for...