Datasheet Summary
ADVANCED INFORMATION
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -30V
RDS(on) 0.9Ω @ VGS = -10V 1.7Ω @ VGS = -4.5V
ID @TA = +25°C -0.62A -0.45A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Features and Benefits
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- The DIODES™ DMP31D7LVQ is suitable for automotive applications requiring specific change...