* 100% Unclamped Inductive Switching (UIS) Test in Production
* Ensures More Reliable and Robust End Application
* High Conversion Efficiency
* Low RDS(ON)
* Minimizes On-State Losses
* Low Input Capacitance
* Fast Switching Speed
* Totally Lead-Free & Fully R
DMT10H010LSSQ Datasheet (576.98 KB)
DMT10H010LSSQ
576.98 KB
100v n-channel mosfet.
DMT10H010LSSQ 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 9.5mΩ @ VGS = 10V 12mΩ @ VGS = 6V 14.5mΩ @ VGS = 4.5V .
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