Datasheet Summary
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) Max 9.5mΩ @ VGS = 10V 12mΩ @ VGS = 6V 14.5mΩ @ VGS = 4.5V
ID Max TA = +25°C
12A
11A
10A
Description and Applications
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
- Backlighting
- Power management functions
- DC-DC converters
SO-8
Features and Benefits
- 100% Unclamped Inductive Switching (UIS) Test in Production
- Ensures More Reliable and Robust End Application
- High Conversion Efficiency
- Low RDS(ON)
- Minimizes On-State Losses
- Low Input Capacitance
- Fast Switching Speed
-...
