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DMT4003SCT Datasheet

N-CHANNEL MOSFET

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Green
DMT4003SCT
40V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
40V
RDS(ON)
3m@VGS = 10V
ID
TC = +25°C
205A
Description and Applications
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high-efficiency power management
applications.
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
Features
100% Unclamped Inductive Switching (UIS) Test in Production
Ensures More Reliable and Robust End Application
Low Input Capacitance
High BVDSS Rating for Power Application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: TO220AB
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 2.24 grams (Approximate)
TO220AB (Generic)
Top View
Bottom View
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMT4003SCT
Case
TO220AB (Generic)
Packaging
50 Pieces/Tube
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
T4003SCT
YYWW
= Manufacturer’s Marking
T4003SCT = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 18 = 2018)
WW or WW or WW = Week Code (01 to 53)
DMT4003SCT
Document number: DS40104 Rev. 4 - 2
1 of 7
www.diodes.com
September 2018
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

DMT4003SCT Datasheet

N-CHANNEL MOSFET

No Preview Available !

Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5)
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 6), L = 0.1mH
Avalanche Energy (Note 6), L = 0.1mH
TC = +25°C
TC = +70°C
TC = +25°C
Symbol
VDSS
VGSS
ID
IDM
IS
ISM
IAS
EAS
DMT4003SCT
Value
Unit
40
V
±20
V
205
164
A
350
A
100
A
350
A
65.7
A
215
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJC
TJ, TSTG
Value
156
0.8
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Symbol Min
BVDSS
40
IDSS
IGSS
VGS(TH)
2
RDS(ON)
VSD
Ciss
Coss
Crss
RG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Typ
2.5
2.4
0.8
6865
1898
21.4
1.15
75.6
23.8
11.3
13.4
41.2
34.4
15.8
59.4
102
Notes:
5. Device mounted on an infinite heatsink.
6. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Max
1
±100
4
3
1.2
Unit
Test Condition
V
VGS = 0V, ID = 250µA
µA VDS = 32V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V
VDS = VGS, ID = 250µA
mVGS = 10V, ID = 90A
V
VGS = 0V, IS = 20A
pF
VDS = 20V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
nCVDD = 20V, ID = 90A,
VGS = 10V
ns
VDD = 20V, VGS = 10V,
ID = 90A, RG = 3.5Ω
ns
nC IF = 50A, di/dt = 100A/μs
DMT4003SCT
Document number: DS40104 Rev. 4 - 2
2 of 7
www.diodes.com
September 2018
© Diodes Incorporated


Part Number DMT4003SCT
Description N-CHANNEL MOSFET
Maker DIODES
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