Datasheet Summary
A DAVDAVNACNECDEI INNNEFFOWORRPMRMAOATDIT IUOOCNNT
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 60V
RDS(ON) Max
14.3mΩ @ VGS = 10V 21mΩ @ VGS = 4.5V
ID Max TA = +25°C
10A 8.1A
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high efficiency power management applications.
- High Frequency Switching
- Synchronous Rectification
- DC-DC Converters
SO-8
Pin 1
Features and Benefits
- 100% Unclamped Inductive Switching (UIS) Test in Production
- Ensures More Reliable and Robust End Application
- High Conversion Efficiency
- Low RDS(ON)
-...