Datasheet Summary
65V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8
Product Summary
BVDSS 65V
RDS(ON) Max 22mΩ @ VGS = 10V 29mΩ @ VGS = 4.5V
ID Max TC = +25°C
25.3A
22.1A
Features and Benefits
- 100% Unclamped Inductive Switching (UIS) Test in Production
- Ensures More Reliable and Robust End Application
- Low RDS(ON)
- Ensures On-State Losses are Minimized
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain...