Datasheet Summary
80V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 80V
RDS(ON) MAX 25mΩ @ VGS = 10V 38mΩ @ VGS = 4.5V
ID MAX TA = +25°C
7.5A
6.1A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Applications
- Power-management functions
- Battery operated systems and solid-state relays
- Drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
U-DFN2020-6 (Type F)
Features and Benefits
- 0.6mm Profile
- Ideal for Low Profile Applications
- PCB Footprint of 4mm2
- Low On-Resistance
- Totally...