* 100% Unclamped Inductive Switching (UIS) Test in Production
* Ensures More Reliable and Robust End Application
* High Conversion Efficiency
* Low RDS(ON)
* Minimizes On-State Losses
* Low Input Capacitance
* Fast Switching Speed
* Totally Lead-Free & Fully R
DMTH10H4M6SPSW Datasheet (789.91 KB)
DMTH10H4M6SPSW
789.91 KB
100v n-channel mosfet.
ADVANCED INFORMATION DMTH10H4M6SPSW 100V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 4.9mΩ @ VGS = 10V ID Max.
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