Datasheet Summary
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 40V
RDS(ON) Max
11.5mΩ @ VGS = 10V 18mΩ @ VGS = 4.5V
ID Max TA = +25°C
11.6A 9.3A
Description
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
- Power-management functions
- DC-DC converters
- Backlighting
Features
- Rated to +175°C
- Ideal for High Ambient Temperature Environments
- 100% Unclamped Inductive Switching
- Ensures More Reliable and Robust End Application
- Low RDS(ON)
- Ensures On State Losses Are Minimized
- 0.6mm Profile
- Ideal for Low Profile Applications
- PCB Footprint of...