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DXT2011P5Q Datasheet 100v NPN Transistor

Manufacturer: Diodes Incorporated

Overview: DXT2011P5Q 100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR.

General Description

This bipolar junction transistor (BJT) is designed to meet the stringent requirement of automotive applications Mechanical Data • Case: PowerDI®5 • Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish—Matte Tin Plated Leads.

Solderable per MIL-STD-202, Method 208 • Weight: 0.093 grams (Approximate)

Key Features

  • BVCEO > 100V.
  • IC = 6A High Continuous Collector Current.
  • ICM = 10A Peak Collector Current.
  • PD up to 3.2W.
  • 43% Smaller than SOT223; 60% Smaller than TO252.
  • Maximum Height just 1.1mm.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • The DXT2011P5Q is suitable for automotive.

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DXT2011P5Q Distributor