ZX5T951GQ Description
This bipolar junction transistor (BJT) is designed to meet the stringent requirements of automotive applications.
ZX5T951GQ Key Features
- BVCEO > -60V
- IC = -5.5A High Continuous Collector Current
- ICM = -15A Peak Pulse Current
- Low Saturation Voltage VCE(sat) < -70mV @ -1A
- RSAT = 39mΩ for a Low Equivalent On-Resistance
- hFE Specified Up to -10A for a High Gain Hold Up
- plementary NPN Type: ZX5T851GQ
- Lead-Free Finish; RoHS pliant (Notes 1 & 2)
- Halogen- and Antimony-Free. “Green” Device (Note 3)
- The ZX5T951GQ is suitable for automotive