50v npn transistor.
* BVCEO > 50V
* IC = 4A Collector Current
* Low Saturation Voltage VCE(sat) < 60mV @ 1A
* Epitaxial Planar Die Construction
* High Peak Current and Ga.
requiring specific change
control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF .
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