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DIOTEC Electronics Corporation

GP100 Datasheet Preview

GP100 Datasheet

(GP100 - GP110) 1 AMP HIGH RELIABILITY SILICON DIODES

No Preview Available !

DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. GPDG-101-1B
1 AMP HIGH RELIABILITY SILICON DIODES
FEATURES
MECHANICAL SPECIFICATION
PROPRIETARY SOFT GLASS R JUNCTION
PASSIVATION FOR SUPERIOR RELIABILITY AND
PERFORMANCE
ACTUAL SIZE OF
DO-41 PACKAGE
DO - 41
SERIES GP100 - GP110
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
MECHANICAL STRENGTH AND HEAT DISSIPATION
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)
www.DataSheet4U.com
EXTREMELY LOW LEAKAGE AT HIGH TEMPERATURES
BD (Dia)
LL
LOW FORWARD VOLTAGE DROP
¤
1A at TA = 75 C WITH NO THERMAL RUNAWAY
MECHANICAL DATA
Case: JEDEC DO-41, molded epoxy
(U/L Flammability Rating 94V-0)
Color Band
Denotes
Cathode
BL
LL
Terminals: Plated axial leads
LD (Dia)
Soldering: Per MIL-STD 202 Method 208 guaranteed
Polarity: Color band denotes cathode
Mounting Position: Any
RoHS COMPLIANT
Weight: 0.012 Ounces (0.34 Grams)
Sym
BL
BD
LL
LD
Minimum
In mm
0.160 4.1
0.103 2.6
1.00 25.4
0.028 0.71
Maximum
In mm
0.205 5.2
0.107 2.7
0.034 0.86
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
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PARAMETER (TEST CONDITIONS)
SYMBOL
RATINGS
UNITS
Series Number
Maximum DC Blocking Voltage
Maximum RMS Voltage
Maximum Peak Recurrent Reverse Voltage
Average Forward Rectified Current @ TI = 75 P C,
Lead length = 0.375 in. (9.5 mm)
Peak Forward Surge Current ( 8.3 mSec single half sine wave
superimposed on rated load)
Maximum Forward Voltage at 1 Amp DC
Maximum Full Cycle Reverse Current @ TÁ = 75 Â C (Note 1)
Maximum Average DC Reverse Current
At Rated DC Blocking Voltage
@ T½ = 25¾ C
@ T¿ = 125À C
Typical Thermal Resistance, Junction to Ambient (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
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DIOTEC Electronics Corporation

GP100 Datasheet Preview

GP100 Datasheet

(GP100 - GP110) 1 AMP HIGH RELIABILITY SILICON DIODES

No Preview Available !

DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
Data Sheet No. GPDG-101-2B
1 AMP HIGH RELIABILITY SILICON DIODES
RATING & CHARACTERISTIC CURVES FOR SERIES GP100 - GP110
1.2
1.0
0.8
0.6
www.DataSheet4U.c0o.4m
0.2
0
0
50
100
150
180
¥
Ambient Temperature, C
FIGURE 1. FORWARD CURRENT DERATING CURVE

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¦ §©¨ 
Number of Cycles at 60 Hz
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
‡ˆ 10
»½Ã ¼¿¾ÀÀÂÄ Á
1.0.1
1.0
0.1 ‰q£ Šs‹Œv¤ 
Ž£X ‘¢’”“}• –— ˜–Šs™šcšœ¥ ›
©ž Ÿ— ¡s¡¢¢ ’
0.01
0.6 0.7 08
0.9 1.0 1.1 1.2
1.3
Instantaneous Forward Voltage (Volts)
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
HII
TJ = 25 oC
56
E¢F G
8¢9 @ 7 CD A©BB
Reverse Voltage, (Volts)
FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
H6
0.1
´q¹ µs¶·vº ¸
.01
0
®¯
°c±
40
²³ ¦§c§ ¨©ª «©¬¢­
Percent of Rated Peak Reverse Voltage
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
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PQQ
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wyx€‚ ƒ „¢…¢„c† ‡ † ‡ ˆ¢„‰’‘£“¢”¢ƒ „–•£“— ˜¢„
™‡ d ™†£p¢recefi ‰
ef
U¢V UXW R¢S T acb d Y`
Pulse Duration (Milliseconds)
FIGURE 6. PEAK FORWARD SURGE CURRENT
% &' ( ) 0 1 2 0 3 4 3


Part Number GP100
Description (GP100 - GP110) 1 AMP HIGH RELIABILITY SILICON DIODES
Maker DIOTEC Electronics Corporation
Total Page 2 Pages
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