Full PDF Text Transcription for 1N1184AM (Reference)
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1N1184AM. For precise diagrams, and layout, please refer to the original PDF.
Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Cur...
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= OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Current, Surge (IFM) at tp = 8.3 ms Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-C) Max. Junction Temperature (TJ) 100.0 V empty V 40.0 A empty A 500.0 A 1000.0 A empty W 1.0 °C/W 175.0 °C NO. TYPE empty empty CASE empty empty 1N1184AM SILICON empty empty DO-5_M-6 empty empty PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted C NO. SYMBOL CONDITIONS MIN. MAX. UNITS 1. IR VR = 100.0 V - 0.1 mA 2. IR VR = 100.0 V, TJ = 140.0 ° C - 10.0 mA 3. VF IF = 40.0 A, TJ = 25.0 ° C (1) - 1.2 V 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14
1N1184AM Datasheet
