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1N3940G-M - DIODE

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Datasheet Details

Part number 1N3940G-M
Manufacturer DSI
File Size 33.64 KB
Description DIODE
Datasheet download datasheet 1N3940G-M Datasheet

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Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Current, Surge (IFM) at tp = 10 ms Max. Power Dissipation (PT) at TC = °C Max. Thermal Resistance (Rth J-A) Max. Junction Temperature (TJ) 600.0 V 720.0 V empty A 2.0 A 6.5 A 70.0 A empty W 70.0 °C/W 175.0 °C NO. TYPE empty empty CASE empty empty 1N3940G-M SILICON CONTROLLED AVALANCHE SOD-57 MIL-S-19500 BURN-IN 48h/125° C PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted C NO. SYMBOL CONDITIONS MIN. MAX. UNITS 1. VF IF = 2.0 A (1) - 1.1 V 2. IR VR = 600.0 V - 5.0 µA 3. IR VR = 600.0 V, TC = 150.0° C - 500.0 µA 4. VBR IR = 50.0 µA 720.0 1400.0 V 5. PRSM tp = 10.0 µs - 4.
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