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1N5550 Datasheet Preview

1N5550 Datasheet

DIODE

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Technical Data
DIODE
maximum ratings
Voltage, Reverse (VR)
Voltage, Reverse Peak (VRM)
Current at VR = OV (IO)
Current Average Rectified (IF)
Current Surge Peak (IFM)
Current, Surge (IFM) at tp = 8.3 ms
Max. Power Dissipation (PT) at TC = °C
Max. Thermal Resistance (Rth J-A)
Max. Junction Temperature (TJ)
200.0 V
200.0 V
empty
A
3.0 A
empty
A
100.0 A
empty
W
70.0 °C/W
175.0 °C
NO.
TYPE
empty
empty
CASE
empty
empty
1N5550
SILICON
RECTIFIER
empty
SOD-64_1.3MM
empty
empty
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
C
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. VF
IF = 3.0 A
(1) - 1.0 V
2. IR
VR = 200.0 V
- 1.0 µA
3. IR
VR = 200.0 V, TA = 100.0° C
- 75.0 µA
4. trr
IF = 0.5 A, IR = 1.0 A, ir = 0.25 A
- 2.0 µs
5. CT
VR = 12.0 V, f = 1.0 MHz
-
100.0
pF
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
17.
18.
19.
20.
Notes
(1)pulse-tested tp 300 µs, duty cycle 2 %
empty
empty
empty
DIMENSIONS
in mm
Marking 1N5550
Customer GENERAL PURPOSE


Part Number 1N5550
Description DIODE
Maker DSI
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1N5550 Datasheet PDF






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