* 1
* 8 ±T0r.e2nch Gate IGBT
* 10µs4S4h±o0rt.2Circuit Withstand
* High The5rm7a±l 0C.y2cling Capability
* Soft Punch Through Silicon
* Isolated AlSiC Base with AlN Substrates
* 55Le.2ad±F0r.e3e construction 1
* 1.8L5ow±0V.C2E(sat) Device
* Hi
DIM1200DDM17-PT500 Datasheet (343.67 KB)
DIM1200DDM17-PT500
DYNEX
343.67 KB
Dual switch igbt.
11.5 ±0.2 14 ±0.2 Replaces DS6282-4 TRENCH Gen5 TMOS Preliminary Information DIM1200DDM17-PT500 Dual Switch IGBT Module DS6282-5 May 2021 (LN40943).
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