Datasheet Summary
11.5 ±0.2 14 ±0.2
Replaces DS6282-4
TRENCH
Gen5 TMOS
Preliminary Information
Dual Switch IGBT Module
DS6282-5 May 2021 (LN40943)
6 ±0.2
Features
1- 8 ±T0r.e2nch Gate IGBT
- 10µs4S4h±o0rt.2Circuit Withstand
- High The5rm7a±l 0C.y2cling Capability
- Soft Punch Through Silicon
- Isolated AlSiC Base with AlN Substrates
- 55Le.2ad±F0r.e3e construction 1- 1.8L5ow±0V.C2E(sat) Device
- High Current Density
KEY PARAMETERS
6 x O7
VCES
VCE(sat)
- (typ)
(max)
IC(PK) (max)
28 ±0.5
1700V
1s.8crVewing depth 1m20a0xA8
2400A
- Measured at the power busbars, not the auxiliary terminals
1(E)...