DIM1200ESM33-F000 Datasheet - DYNEX

IGBT

* 10µs Short Circuit Withstand

* High Thermal Cycling Capability

* Soft Punch Through Silicon

* Isolated AlSiC Base With AlN Substrates

* Lead Free Construction KEY PARAMETERS VCES VCE(sat)

* (typ) IC (max) IC(PK) (max) 3300V 2.8V 1200A 2400A

* Measured at the aux

DIM1200ESM33-F000

DYNEX

401.07 KB

Igbt.

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DIM1200ESM33-F000 IGBT DYNEX

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