Datasheet Summary
Replaces DS6279-2
TRENCH Gen5 TMOS
Half Bridge IGBT Module
DS6279-3 February 2020 (LN39598)
Features
- Trench Gate IGBT
- Cu Base with Enhanced Al2O3 Substrates
- 10µs Short Circuit Withstand
- pact Module
KEY PARAMETERS
VCES
VCE(sat)
- (typ)
(max)
IC(PK) (max)
1200V 1.65V 450A 900A
- Measured at the auxiliary terminals
APPLICATIONS
- Motor Drives
- Power Charging Equipment
- Renewable Energy Power Conversion
- High Reliability Inverters
- Electric Vehicles
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to...