DIM450M1HS12-PB500 Datasheet - DYNEX

Half Bridge IGBT

* Trench Gate IGBT

* Cu Base with Enhanced Al2O3 Substrates

* 10µs Short Circuit Withstand

* Compact Module KEY PARAMETERS VCES VCE(sat)

* (typ) IC (max) IC(PK) (max) 1200V 1.65V 450A 900A

* Measured at the auxiliary terminals APPLICATIONS

DIM450M1HS12-PB500

DYNEX

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Half bridge igbt.

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DIM450M1HS12-PB500 Half Bridge IGBT DYNEX

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