Datasheet Details
| Part number | DS1345W |
|---|---|
| Manufacturer | Dallas Semiconducotr |
| File Size | 211.32 KB |
| Description | 1024k Nonvolatile SRAM |
| Download | DS1345W Download (PDF) |
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| Part number | DS1345W |
|---|---|
| Manufacturer | Dallas Semiconducotr |
| File Size | 211.32 KB |
| Description | 1024k Nonvolatile SRAM |
| Download | DS1345W Download (PDF) |
|
|
|
A0-A16 - Address Inputs DQ0-DQ7 - Data In/Data Out CE - Chip Enable WE - Write Enable OE - Output Enable RST - Reset Output BW - Battery Warning Output VCC GND - Power (+3.3 Volts) - Ground NC - No Connect DESCRIPTION The DS1345W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits.
Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition.
When such a condition occurs, the lithium energy source is automatically switched on and write protection
19-5587; Rev 10/10 www.maxim-ic.com DS1345W 3.3V 1024k Nonvolatile SRAM with Battery.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
DS1345AB | 1024k Nonvolatile SRAM | Maxim Integrated Products |
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DS1345Y | 1024k Nonvolatile SRAM | Maxim Integrated Products |
| Part Number | Description |
|---|---|
| DS1345BL | 1024K Nonvolatile SRAM |
| DS1345YL | 1024K Nonvolatile SRAM |
| DS1330AB | (DS1330Y / DS1330AB) 256k Nonvolatile SRAM |
| DS1330W | 3.3V 256K Nonvolatile SRAM |
| DS1330Y | (DS1330Y / DS1330AB) 256k Nonvolatile SRAM |
| DS1336 | Afterburner Chip |
| DS1000 | 5-Tap Silicon Delay Line |
| DS1004 | 5-Tap High Speed Silicon Delay Line |
| DS1005 | 5-Tap Silicon Delay Line |
| DS1007 | 7-1 Silicon Delay Line |