DS1345W - 1024k Nonvolatile SRAM

Product Overview

Dallas Semiconducotr

Datasheet Details

Part number	DS1345W
Manufacturer	Dallas Semiconducotr
File Size	211.32 KB
Description	1024k Nonvolatile SRAM
Datasheet	DS1345W Datasheet
Additional preview pages of the DS1345W datasheet.

Product details

Description

A0-A16 - Address Inputs DQ0-DQ7 - Data In/Data Out CE - Chip Enable WE - Write Enable OE - Output Enable RST - Reset Output BW - Battery Warning Output VCC GND - Power (+3.3 Volts) - Ground NC - No Connect DESCRIPTION The DS1345W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits.Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance c

Features

10 years minimum data retention in the absence of external power.
Data is automatically protected during power loss.
Power supply monitor resets processor when VCC power loss occurs and holds processor in reset during VCC ramp-up.
Battery monitor checks remaining capacity daily.
Read and write access times of 100 ns.
Unlimited write cycle endurance.
Typical standby current 50 µA.
Upgrade for 128k x 8 SRAM, EEPROM or Flash.
Lithium battery is electric.

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Published: Mar 15, 2007 |