DS2016 ram equivalent, 2k x 8 3v/5v operation static ram.
* Low-power CMOS design
* Standby current
- 50nA max at tA = +25°C VCC = 3.0V - 100nA max at tA = +25°C VCC = 5.5V - 1µA max at tA = +60°C VCC = 5.5V
* Full o.
PIN ASSIGNMENT
A7 1 A6 2 A5 3 A4 4 A3 5 A2 6 A1 7 A0 8 DQ0 9 DQ1 10 DQ2 11 GND 12
24
VCC
23 A8
22 A9
21 WE
20 OE.
A0 to A10 - Address Inputs
DQ0 to DQ7 - Data Input/Output
CE
- Chip Enable Input
WE
- Write Enable Input
OE
- Output Enable Input
VCC GND
- Power Supply Input 2.7V - 5.5V - Ground
DESCRIPTION
The DS2016 2k x 8 3V/5V Operation Static RAM is.
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