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DS2016 - 2k x 8 3V/5V Operation Static RAM

Description

A0 to A10 - Address Inputs DQ0 to DQ7 - Data Input/Output CE - Chip Enable Input WE - Write Enable Input OE - Output Enable Input VCC GND - Power Supply Input 2.7V - 5.5V - Ground DESCRIPTION The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random acce

Features

  • Low-power CMOS design.
  • Standby current - 50nA max at tA = +25°C VCC = 3.0V - 100nA max at tA = +25°C VCC = 5.5V - 1µA max at tA = +60°C VCC = 5.5V.
  • Full operation for VCC = 5.5V to 2.7V.
  • Data retention voltage = 5.5V to 2.0V.
  • Fast 5V access time - DS2016-100 100ns.
  • Reduced-speed 3V access time - DS2016-100 250ns.
  • Operating temperature range of -40°C to +85°C.
  • Full static operation.
  • TTL compatible inputs and outputs over voltage range of 5.5V to 2.7V.

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Datasheet Details

Part number DS2016
Manufacturer Dallas Semiconducotr
File Size 162.69 KB
Description 2k x 8 3V/5V Operation Static RAM
Datasheet download datasheet DS2016 Datasheet
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Full PDF Text Transcription

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www.maxim-ic.com DS2016 2k x 8 3V/5V Operation Static RAM FEATURES § Low-power CMOS design § Standby current - 50nA max at tA = +25°C VCC = 3.0V - 100nA max at tA = +25°C VCC = 5.5V - 1µA max at tA = +60°C VCC = 5.5V § Full operation for VCC = 5.5V to 2.7V § Data retention voltage = 5.5V to 2.0V § Fast 5V access time - DS2016-100 100ns § Reduced-speed 3V access time - DS2016-100 250ns § Operating temperature range of -40°C to +85°C § Full static operation § TTL compatible inputs and outputs over voltage range of 5.5V to 2.
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