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DS2016 Datasheet, Dallas Semiconducotr

DS2016 Datasheet, Dallas Semiconducotr

DS2016

datasheet Download (Size : 162.69KB)

DS2016 Datasheet

DS2016 ram equivalent, 2k x 8 3v/5v operation static ram.

DS2016

datasheet Download (Size : 162.69KB)

DS2016 Datasheet

Features and benefits


* Low-power CMOS design
* Standby current - 50nA max at tA = +25°C VCC = 3.0V - 100nA max at tA = +25°C VCC = 5.5V - 1µA max at tA = +60°C VCC = 5.5V
* Full o.

Application

PIN ASSIGNMENT A7 1 A6 2 A5 3 A4 4 A3 5 A2 6 A1 7 A0 8 DQ0 9 DQ1 10 DQ2 11 GND 12 24 VCC 23 A8 22 A9 21 WE 20 OE.

Description

A0 to A10 - Address Inputs DQ0 to DQ7 - Data Input/Output CE - Chip Enable Input WE - Write Enable Input OE - Output Enable Input VCC GND - Power Supply Input 2.7V - 5.5V - Ground DESCRIPTION The DS2016 2k x 8 3V/5V Operation Static RAM is.

Image gallery

DS2016 Page 1 DS2016 Page 2 DS2016 Page 3

TAGS

DS2016
Operation
Static
RAM
Dallas Semiconducotr

Manufacturer


Dallas Semiconducotr

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