900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Dawin Electronics

DM2G100SH6N Datasheet Preview

DM2G100SH6N Datasheet

High Power Rugged Type IGBT Module

No Preview Available !

May. 2009
High Power Rugged Type IGBT Module
DM2G100SH6N
Description
DAWIN’S IGBT module devices are optimized to reduce losses
and switching noise in high frequency power conditioning electrical systems.
These IGBT modules are ideally suited for power inverters, motors drives
and other applications where switching losses are significant portion of the
total losses.
Features
High Speed Switching
BVCES = 600V
Low Conduction Loss : VCE(sat) = 2.1 V (typ.)
Fast & Soft Anti-Parallel FWD
Short circuit rated : Min.10uS at TC=100
Reduced EMI and RFI
Isolation Type Package
Equivalent Circuit and Package
Equivalent Circuit
①②
6
7
5
4
Package : 7DM-1 Series
Applications
Motor Drives, High Power Inverters, Welding Machine,
Induction Heating, UPS , CVCF, Robotics , Servo Controls,
High Speed SMPS
Absolute Maximum Ratings @ Tj=25(Per Leg)
Please see the package out line information
Symbol
Parameter
Conditions
Ratings
Unit
VCES Collector-Emitter Voltage
VGES Gate-Emitter Voltage
IC Collector Current
ICM (1)
Pulsed Collector Current
IF Diode Continuous Forward Current
IFM Diode Maximum Forward Current
TSC Short Circuit Withstand Time
PD Maximum Power Dissipation
Tj Operating Junction Temperature
Tstg Storage Temperature Range
Viso Isolation Voltage
Mounting screw Torque :M6
Power terminals screw Torque :M5
-
-
TC = 25
TC = 75
-
TC = 100
-
TC = 100
TC = 25
-
-
AC 1 minute
-
-
Note : (1) Repetitive rating : Pulse width limited by max. junction temperature
Copyright@Dawin Electronics Corp. All right reserved
1/7
600
±20
125
100
200
100
200
10
480
-40 ~ 150
-40 ~ 125
2500
4.0
2.0
V
V
A
A
A
A
A
uS
W
V
N.m
N.m




Dawin Electronics

DM2G100SH6N Datasheet Preview

DM2G100SH6N Datasheet

High Power Rugged Type IGBT Module

No Preview Available !

May. 2009
DM2G100SH6N
Electrical Characteristics of IGBT @ TC=25(unless otherwise specified)
Symbol
BVCES
BVCES/
Parameter
C - E Breakdown Voltage
Temperature Coeff. of
Conditions
VGE = 0V , IC =250uA
VGE = 0V , IC = 1.0mA
Values
Min. Typ. Max.
600 -
-
- 0.6 -
Unit
V
V/
TJ Breakdown Voltage
VGE(th)
G - E threshold voltage
IC = 500uA , VCE = VGE
5 - 8.5 V
ICES Collector cutoff Current
VCE = 600V , VGE = 0V
- - 250 uA
IGES G - E leakage Current
VGE =±20V
- - ±100 nA
VCE(sat)
Collector to Emitter
IC= 100A, VGE= 15V @TC= 25
- 2.1 2.8 V
saturation voltage
IC= 100A, VGE= 15V @TC= 100- 2.4 -
V
Cies Input capacitance
VGE = 0V , f = 1
- 10000 -
pF
Coes Output capacitance
VCE = 30V
- 950 -
pF
Cres Reverse transfer capacitance
- 230 -
pF
td(on) Turn on delay time
VCC = 300V , IC = 100A
- 25 - nS
tr Turn on rise time
VGE = 15V
- 50 - nS
td(off) Turn off delay time
RG = 6.8
- 80 - nS
tf Turn off fall time
Inductive Load, @ Tc=25
- 110 200 nS
Eon Turn on Switching Loss
- 4.8 -
mJ
Eoff Turn off Switching Loss
- 9.6 -
mJ
Ets Total Switching Loss
- 14.4 -
mJ
Tsc Short Circuit Withstand Time
Vcc = 300V, VGE = 15V
10 - - uS
@TC = 100
Qg Total Gate Charge
Vcc = 300V
- 400 510 nC
Qge Gate-Emitter Charge
VGE = 15V
- 76 125 nC
Qgc Gate-Collector Charge
IC = 100A
- 175 260 nC
Copyright@Dawin Electronics Corp. All right reserved
2/7


Part Number DM2G100SH6N
Description High Power Rugged Type IGBT Module
Maker Dawin Electronics
Total Page 7 Pages
PDF Download

DM2G100SH6N Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 DM2G100SH6N High Power Rugged Type IGBT Module
Dawin Electronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy