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2SD667A - NPN Transistor

Description

Designed for low frequency power amplifier applications.

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Datasheet Details

Part number 2SD667A
Manufacturer Dc Components
File Size 213.08 KB
Description NPN Transistor
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DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SD667A TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier applications. Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO 120 100 Emitter-Base Voltage VEBO 5 Collector Current (DC) Collector Current (pulse) IC 1 IC 2 Total Power Dissipation PD 900 Junction Temperature Storage Temperature TJ TSTG +150 -55 to +150 Unit V V V A A mW oC oC TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) .500 (12.70) Min 2o Typ 2o Typ .050 (1.27)Typ .022(0.56) .014(0.36) .100 (2.54) Typ .022(0.56) .014(0.36) 321 .148(3.76) .132(3.36) .050 5oTyp.
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