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2SD965 - NPN Transistor

Description

Designed for use as AF output amplifier and flash unit.

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Datasheet Details

Part number 2SD965
Manufacturer Dc Components
File Size 232.49 KB
Description NPN Transistor
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DC COMPONENTS CO., LTD. R 2SD965 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use as AF output amplifier and flash unit. TO-92 Pinning 1 = Emitter 2 = Collector 3 = Base .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 40 20 7 5 750 +150 -55 to +150 Unit V V V A mW o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 3 2 1 .050 o o 5 Typ. 5 Typ. (1.
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