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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DCR06C
THRU
DCR06F
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
VOLTAGE RANGE - 300 to 600 Volts
CURRENT - 0.6 Ampere
Description
* Driven directly with IC and MOS device
* Feature proprietary, void-free glass passivated chips
* Available in voltage ratings from 300 to 600 volts
* Sensitive gate trigger current
* Designed for high volume, line-powered control
application in relay lamp drivers, small motor controls,
gate drivers for large thyristors
Pinning
1 = Cathode, 2 = Gate, 3 = Anode
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol
Peak Repetitive Off-State
Voltage
DCR06C
DCR06D
DCR06F
VDRM
On-State RMS Current
(TA=57oC, 180o Conduction Angles)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60Hz)
IT(RMS)
ITSM
Forward Peak Gate Current
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Operating Junction Temperature
Storage Temperature
IGM
PGM
PG(AV)
TJ
TSTG
Rating
300
400
600
0.6
8
0.1
0.1
0.01
-40 to +110
-40 to +150
Unit
V
A
A
A
W
W
oC
oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500 Min
(12.70)
.050 Typ
(1.27)
.022(0.56)
.014(0.36)
(2.1.5040)Typ
2oTyp
2oTyp
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
5oTyp 5oTyp (1.0.2570)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Peak Repetitive Forward Off-State
Blocking Current
TJ=25oC
TJ=110oC
Peak Forward On-State Voltage
Continuous DC Gate Trigger Current
Continuous DC Gate Trigger Voltage
DC Holding Current
Critical Rate-of-Rise of Off-State Voltage
Gate Controlled Turn-on Time(tD+tR)
Thermal Resistance, Junction to Case
Symbol
IDRM
VTM
IGT
VGT
IH
dv/dt
Tgt
RθJC
Min
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
5.0
2.2
75
Max
10
100
1.7
200
0.8
5.0
-
-
-
Unit
µA
V
µA
V
mA
V/µS
µsec
oC/W
Test Conditions
VAK=Rated VDRM
RGK=1KΩ
ITM=0.6A Peak
VAK=7V DC, RL=100Ω
VAK=7V DC, RL=100Ω
RGK=1KΩ
RGK=1KΩ
IGT=10mA
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