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DMBT5087 Datasheet

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DMBT5087
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low noise, high gain, general purpose
amplifier applications.
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
-50
-50
-3
-50
225
+150
-55 to +150
Unit
V
V
V
mA
mW
oC
oC
.020(0.50)
.012(0.30)
SOT-23
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
12
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO -50
Collector-Emitter Breakdown Voltage
BVCEO -50
Emitter-Base Breakdown Volatge
BVEBO
-3
Collector Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
ICBO1
ICBO2
VCE(sat)
VBE(sat)
-
-
-
-
DC Current Gain(1)
hFE1
hFE2
250
250
hFE3
250
Transition Frequency
fT 40
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-10
-50
-0.3
-0.85
800
-
-
-
4
Unit
V
V
V
nA
nA
V
V
-
-
-
MHz
pF
Test Conditions
IC=-100µA
IC=-1mA
IE=-10µA
VCB=-10V
VCB=-35V
IC=-10mA, IB=-1mA
IC=-10mA, IB=-1mA
IC=-0.1mA, VCE=-5V
IC=-1mA, VCE=-5V
IC=-10mA, VCE=-5V
IC=-0.5mA, VCE=-5V, f=100MHz
VCB=-5V, f=100MHz


Part Number DMBT5087
Description TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Maker Dc Components
Total Page 1 Pages
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