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DMBT5551 PNP Transistor

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Description

www.DataSheet4U.com DC COMPONENTS CO., LTD.R DMBT5551 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Descri.
Designed for general purpose applications requiring high breakdown voltage.

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Datasheet Specifications

Part number
DMBT5551
Manufacturer
Dc Components
File Size
251.81 KB
Datasheet
DMBT5551_DcComponents.pdf
Description
PNP Transistor

Applications

* requiring high breakdown voltage. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 1 3 .063(1.60) .055(1.40) .108(0.65) .089(0.25) 2 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current T

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