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DMBTA14 Datasheet

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DMBTA14
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
Description
Designed for applications requiring high current gain.
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VEBO
IC
PD
TJ
TSTG
Rating
30
30
10
300
225
+150
-55 to +150
Unit
V
V
V
mA
mW
oC
oC
.020(0.50)
.012(0.30)
SOT-23
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
12
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO
30
Collector-Emitter Breakdown Voltage
BVCES
30
Emitter-Base Breakdown Volatge
BVEBO
10
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
IEBO
VCE(sat)
-
-
Base-Emitter On Voltage
VBE(on)
-
DC Current Gain(1)
hFE1
hFE2
10K
20K
Transition Frequency
fT 125
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
100
100
1.5
2
-
-
-
6
Unit
V
V
V
nA
nA
V
V
-
-
MHz
pF
Test Conditions
IC=100µA
IC=100µA
IE=10µA
VCB=30V
VEB=10V
IC=100mA, IB=0.1mA
IC=100mA, VCE=5V
IC=10mA, VCE=5V
IC=100mA, VCE=5V
IC=10mA, VCE=5V, f=100MHz
VCB=10V, f=1MHz


Part Number DMBTA14
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Maker Dc Components
Total Page 1 Pages
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