surface mount schottky barrier diodes.
* * * * * * Metal to silicon rectifier majority carrier conduction Low power loss, High efficiency High current capability Low forward voltage drop High surge capacity Fo.
.405(10.3) .380(9.7) 2 .370(9.4) .330(8.4) 1 2 3 .055 Max (1.4)
TO-263(D2 PAK)
.190(4.8) .160(4.1) 6o~8o .055(1.4) .04.
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