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BTC08-400 Datasheet Preview

BTC08-400 Datasheet

SILICON BIDIRECTIONAL THYRISTORS

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DIGITRON SEMICONDUCTORS
BTC08-(A) SERIES
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1)
(TJ = 110°C)
BTC08-100(A)
BTC08-200(A)
BTC08-400(A)
BTC08-600(A)
VDRM
100
Volts
200
400
600
RMS on-state current (TC = 72°C)
IT(RMS)
8.0 Amps
Peak surge current
(1 cycle, 50Hz, TJ = -40 to +110°C)
Circuit fusing considerations (TJ = -40 to 110°C , t = 10ms)
ITSM
Amps
60
I2t 18 A2s
Peak gate power (pulse width = 10µs)
PGM 10 Watts
Average gate power (TC = 80°C, t = 10ms)
Peak gate current (pulse width = 10µs)
PG(AV)
IGM
0.5 Watts
3.5 Amps
Operating junction temperature range
TJ
-40 to +110
°C
Storage temperature range
Tstg
-40 to +150
°C
ITM = 12A, IG = 200mA
di/dt
10 A/µs
Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the
rated blocking voltage.
Note 2: Soldering temperatures shall not exceed 200°C for 10 seconds.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
RӨJC
RӨJA
Maximum
2.2
60
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Peak blocking current (either direction)
(Rated VDRM @ TJ = 110°C, gate open)
Peak on-state voltage (either direction)
(ITM = 10A peak)
Gate trigger voltage (continuous dc)
(main terminal voltage = 12V, RL = 100)
All types, all quadrants
(main terminal voltage = rated VDRM, RL = 10k, TJ = 110°C)
All types, all quadrants
Holding current (either direction)
(main terminal source voltage= 12V, gate open, initiating current = 1.0A)
TC = -40°C
TC = 25°C
Latching current
(main terminal source voltage = 24V, gate trigger source = 15V, 100)
MT2(+), G(+)
MT2(-), G(-)
MT2(+), G(-)
Symbol
IDRM
VTM
Min
-
-
Typ.
-
1.5
Max
1.0
1.75
Unit
mA
Volts
VGTM - - 2.5 Volts
0.2 -
-
IH
mA
- - 100
- - 45
IL - - 100 mA
- - 100
- - 200
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130204
http://www.Datasheet4U.com




Digitron

BTC08-400 Datasheet Preview

BTC08-400 Datasheet

SILICON BIDIRECTIONAL THYRISTORS

No Preview Available !

DIGITRON SEMICONDUCTORS
BTC08-(A) SERIES
SILICON BIDIRECTIONAL THYRISTORS
Characteristic
Critical rate of rise of off-state voltage
(Rated VDRM, exponential voltage rise, gate open, TC = 100°C)
Blocking voltage application rate at commutation
(@ VDRM, gate open commutating di/dt = 3.2A/ms)
Characteristic
Peak gate trigger current
(main terminal voltage = 12V, RL = 100)
BTC08 SERIES, TJ = 25°C
BTC08 SERIES, TJ = -40°C
BTC08-()A SERIES, TJ = 25°C
BTC08-()A SERIES, TJ = -40°C
MECHANICAL CHARACTERISTIC
Case
TO-220AB
Marking
Body painted, alpha-numeric
Pin out
See below
Symbol
dv/dt
dv/dt(c)
Min
50
4
Typ.
100
-
Max
-
-
Unit
V/µs
V/µs
Symbol
I
mA
QUADRANT
II III
mA mA
IV
mA
50 50 50
-
IGTM
100 100 100
-
50 50 50 100
100 100 100 200
TO-220AB
Inches
Millimeters
Min Max Min Max
A 0.575 0.620 14.600 15.750
B 0.380 0.405 9.650 10.290
C 0.160 0.190 4.060 4.820
D 0.025 0.035 0.640 0.890
F 0.142 0.147 3.610 3.730
G 0.095 0.105 2.410 2.670
H 0.110 0.155 2.790 3.930
J 0.014 0.022 0.360 0.560
K 0.500 0.562 12.700 14.270
L 0.045 0.055 1.140 1.390
N 0.190 0.210 4.830 5.330
Q 0.100 0.120 2.540 3.040
R 0.080 0.110 2.040 2.790
S 0.045 0.055 1.140 1.390
T 0.235 0.255 5.970 6.480
U - 0.050 - 1.270
V 0.045 - 1.140
-
Z - 0.080 - 2.030
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130204
http://www.Datasheet4U.com


Part Number BTC08-400
Description SILICON BIDIRECTIONAL THYRISTORS
Maker Digitron
Total Page 4 Pages
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