BTC08-400 - SILICON BIDIRECTIONAL THYRISTORS

Digitron

Download the BTC08-400 datasheet PDF. This datasheet also covers the BTC08-100 variant, as both devices belong to the same silicon bidirectional thyristors family and are provided as variant models within a single manufacturer datasheet.

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BTC08-400 silicon bidirectional thyristors by Digitron - Datasheet Preview — Note: The manufacturer provides a single datasheet file (BTC08-100-Digitron.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	BTC08-400
Manufacturer	Digitron
File Size	185.21 KB
Description	SILICON BIDIRECTIONAL THYRISTORS
Datasheet	BTC08-400 Datasheet

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Other Datasheets by Digitron

Part Number	Description
BTC08-400A	SILICON BIDIRECTIONAL THYRISTORS
BTC08-100	SILICON BIDIRECTIONAL THYRISTORS
BTC08-100A	SILICON BIDIRECTIONAL THYRISTORS
BTC08-200	SILICON BIDIRECTIONAL THYRISTORS
BTC08-200A	SILICON BIDIRECTIONAL THYRISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DIGITRON SEMICONDUCTORS BTC08-(A) SERIES SILICON BIDIRECTIONAL THYRISTORS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Peak repetitive off-state voltage (TJ = 110°C) BTC08-100(A) BTC08-200(A) BTC08-400(A) BTC08-600(A) Peak surge current (1 cycle, 50Hz, TJ = -40 to +110°C) Circuit fusing considerations (TJ = -40 to 110°C , t = 10ms) Peak gate power (pulse width = 10µs) Average gate power (TC = 80°C, t = 10ms) Peak gate current (pulse width = 10µs) Operating junction temperature range Storage temperature range ITM = 12A, IG = 200mA (1) Symbol Value Unit VDRM 100 200 400 600 8.0 60 18 10 0.5 3.