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Digitron Semiconductors

1N960B Datasheet Preview

1N960B Datasheet

500mW SILICON ZENER DIODES

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1N957B-1N992B
High-reliability discrete products
and engineering services since 1977
500 mW SILICON ZENER DIODES
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Operating temperature
Storage temperature
Thermal resistance
Steady-state power
Forward voltage
Solder temperature
Value
-65°C to +175°C
-65°C to +175°C
250°C/W junction to lead at 3/8” lead length from body, or 310°C/W junction to ambient when mounted on
FR4 PC board(1)
0.5W at TL ≤ 50°C 3/8” from body or 0.48W at TA ≤ 25°C when mounted on FR4 PC board (1)
@ 200 mA: 1.1 volts maximum (1N957B-1N985B)
@ 200mA: 1.3 volts maximum (1N985-1N992B)
260°C for 10 s maximum
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Part
number
Nominal
zener
voltage
(2)
Zener
test
current
Maximum zener impedance(3)
Maximum
DC zener
current
(4)
(1)
VZ
IZT
ZZT @ IZT
ZZK
@IZK
IZM
Volts
mA
Ohms
Ohms
mA
mA
1N957B 6.8 18.5 4.5 700 1.0 55
1N958B 7.5 16.5 5.5 700 0.5 50
1N959B 8.2 15.0 6.5 700 0.5 45
1N960B 9.1 14.0 7.5 700 0.5 41
1N961B 10 12.5 8.5 700 0.25 38
1N962B 11 11.5 9.5 700 0.25 32
1N963B
12
10.5 11.5 700 0.25
31
1N964B
13
9.5
13
700 0.25
28
1N965B
15
8.5
16
700 0.25
25
1N966B
16
7.8
17
700 0.25
24
1N967B
18
7.0
21
750 0.25
20
1N968B
20
6.2
25
750 0.25
18
1N969B
22
5.6
29
750 0.25
16
1N970B
24
5.2
33
750 0.25
15
1N971B
27
4.6
41
750 0.25
13
1N972B
30
4.2
49
1000
0.25
12
1N973B
33
3.8
58
1000
0.25
11
1N974B
36
3.4
70
1000
0.25
10
1N975B
39
3.2
80
1000
0.25
9.5
1N976B
43
3.0
93
1500
0.25
8.8
Maximum
surge
current
(5)
IZSM
mA
300
275
250
225
200
175
160
150
130
120
110
100
90
80
70
65
60
55
46
44
Maximum reverse
leakage current
IR @VR
µA Volts
150 5.2
75 5.7
50 6.2
25 6.9
10 7.6
5 8.4
5 9.1
5 9.9
5 11.4
5 12.2
5 13.7
5 15.2
5 16.7
5 18.2
5 20.6
5 22.8
5 25.1
5 27.4
5 29.7
5 32.7
Maximum
temperature
coefficient
αvz
%/°C
0.05
0.058
0.065
0.068
0.075
0.076
0.077
0.079
0.082
0.083
0.085
0.086
0.087
0.088
0.090
0.091
0.092
0.093
0.094
0.095
Rev. 20150825




Digitron Semiconductors

1N960B Datasheet Preview

1N960B Datasheet

500mW SILICON ZENER DIODES

No Preview Available !

1N957B-1N992B
High-reliability discrete products
and engineering services since 1977
500 mW SILICON ZENER DIODES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Part
number
Nominal
zener
voltage
(2)
Zener
test
current
Maximum zener impedance(3)
Maximum
DC zener
current
(4)
(1)
VZ
IZT
ZZT @ IZT
ZZK
@IZK
IZM
Volts
mA
Ohms
Ohms
mA
mA
Maximum
surge
current
(5)
IZSM
mA
Maximum reverse
leakage current
IR @VR
µA Volts
Maximum
temperature
coefficient
αvz
%/°C
1N977B
47
2.7
105
1500
0.25
7.9
40
5 35.8 0.095
1N978B
51
2.5
125
1500
0.25
7.4
37
5 38.8 0.096
1N979B
56
2.2
150
2000
0.25
6.8
35
5 42.6 0.096
1N980B
62
2.0
185
2000
0.25
6.0
30
5 47.1 0.097
1N981B
68
1.8
230
2000
0.25
5.5
28
5 51.7 0.097
1N982B
75
1.7
270
2000
0.25
5.0
26
5 56.0 0.098
1N983B
82
1.5
330
3000
0.25
4.6
23
5 62.2 0.098
1N984B
91
1.4
400
3000
0.25
4.1
21
5 69.2 0.099
1N985B
100
1.3
500
3000
0.25
3.7
18
5 76.0 0.110
1N986B
110
1.1
750
4000
0.25
3.3
16
5 83.6 0.110
1N987B
120
1.0
900
4500
0.25
3.1
15
5 91.2 0.110
1N988B
130
0.95
1100
5000
0.25
2.7
13
5 98.8 0.110
1N989B
150
0.85
1500
6000
0.25
2.4
12
5
114.0
0.110
1N990B
160
0.80
1700
6500
0.25
2.2
11
5
121.6
0.110
1N991B
180
0.68
2200
7100
0.25
2.0
10
5
136.8
0.110
1N992B
200
0.65
2500
8000
0.25
1.8
9
5
152.0
0.110
NOTE 1. Zener voltage tolerance on ‘’B’’ suffix is + 5%. Suffix letter A denotes +10%. No suffix denotes +20% tolerance. ‘’C’’ suffix denotes + 2% and ‘’D’’ suffix denotes + 1%.
NOTE 2. Zener voltage is measured with the device junction in thermal equilibrium at an ambient temperature of 25°C + 3°C.
NOTE 3. Zener impedance is derived by superimposing on IZTA 60HZ rms a.c. current equal to 10% of IZT.
NOTE 4: The values of IZM are calculated for a ±5% tolerance on nominal zener voltage. Allowance has been made for the rise in zener voltage above VZT which results from zener impedance
and the increase in junction temperature as power dissipation approaches 400mW. In the case of individual diodes IZM is that value of current which results in a dissipation of 400mW at 75°C
lead temperature at 3/8” from body.
NOTE 5: The surge for IZM is a square wave or equivalent half-sine wave pulse of 1/120 second duration.
Rev. 20150825


Part Number 1N960B
Description 500mW SILICON ZENER DIODES
Maker Digitron Semiconductors
Total Page 4 Pages
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