2N2417 Datasheet Text
DIGITRON SEMICONDUCTORS
2N2417
- 2N2422, A, B
SILICON UNIJUNCTION TRANSISTOR
MAXIMUM RATINGS
Rating
Symbol
Value
Power dissipation(1)
PD 350
RMS emitter current
IE 70
Peak pulse emitter current (2) ie 2
Emitter reverse voltage
VB2E
60
Interbase voltage
VB2B1
65
Operating junction temperature range
TJ
-65 to 175
Storage temperature range
Tstg -65 to 175
Note 1: Derate 2.33mW/°C increase in ambient temperature. The total power dissipation must be limited by the external circuitry. Note 2: Capacitor discharge
- 10µF or less, 30 volts or less.
Unit mW mA Amps Volts Volts °C °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Intrinsic standoff ratio (VB2B1 = 10V) (1)...