High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
Peak repetitive forward and reverse blocking voltage(1)
(RGK = 1kΩ, TJ = -40 to +110°C)
Forward current RMS (all conduction angles)
Average forward current (TA = 30°C)
Peak non-repetitive surge current
(1/2 cycle, 60Hz, TJ = -40 to +110°C)
Circuit fusing considerations
(t = 8.3ms)
Peak gate power
Average gate power
Forward peak gate current
IGFM 0.2 Amps
Peak reverse gate voltage
Operating junction temperature range
-40 to +110
Storage temperature range
-40 to +150
6 In. lb.
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Note 2: Torque rating applies with use of compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink
contact pad are common. Soldering temperature shall not exceed 200°C. For optimum results, an activated flux is recommended.
Thermal resistance, junction to case
Thermal resistance, junction to ambient
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
Peak forward or reverse blocking current
(VAK = rated VDRM or VRRM, RGK = 1kΩ)
TJ = 25°C
TJ = 110°C