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Digitron Semiconductors

C106E Datasheet Preview

C106E Datasheet

SILICON CONTROLLED RECTIFIER

No Preview Available !

C106 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse blocking voltage(1)
(RGK = 1kΩ, TJ = -40 to +110°C)
C106Q
C106Y
C106F
C106A
C106B
C106C
C106D
C106E
C106M
VRRM, VDRM
15
30
50
100 Volts
200
300
400
500
600
Forward current RMS (all conduction angles)
Average forward current (TA = 30°C)
Peak non-repetitive surge current
(1/2 cycle, 60Hz, TJ = -40 to +110°C)
Circuit fusing considerations
(t = 8.3ms)
IT(RMS)
IT(AV)
ITSM
I2t
4 Amps
2.55 Amps
20 Amps
1.65 A2s
Peak gate power
Average gate power
PGM
PG(AV)
0.5 Watts
0.1 Watts
Forward peak gate current
IGFM 0.2 Amps
Peak reverse gate voltage
VGRM
6 Volts
Operating junction temperature range
TJ
-40 to +110
°C
Storage temperature range
Tstg
-40 to +150
°C
Mounting torque(2)
6 In. lb.
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Note 2: Torque rating applies with use of compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink
contact pad are common. Soldering temperature shall not exceed 200°C. For optimum results, an activated flux is recommended.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
RӨJC
RӨJA
Maximum
3
75
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
Characteristic
Symbol
Peak forward or reverse blocking current
(VAK = rated VDRM or VRRM, RGK = 1kΩ)
TJ = 25°C
TJ = 110°C
IDRM, IRRM
Min. Typ.
--
--
Max.
10
100
Unit
µA
Rev. 20130118




Digitron Semiconductors

C106E Datasheet Preview

C106E Datasheet

SILICON CONTROLLED RECTIFIER

No Preview Available !

High-reliability discrete products
and engineering services since 1977
Characteristic
Forward “on” voltage
(IFM = 1A peak)
Gate trigger current (continuous dc)
(VAK = 6Vdc, RL = 100Ω)
(VAK = 6Vdc, RL = 100Ω, TC = -40°C)
Gate trigger voltage (continuous dc)
(VAK = 6Vdc, RL = 100Ω)
(VAK = 6Vdc, RL = 100Ω, TC = -40°C)
Holding current
(VD = 12Vdc, RGK = 1kΩ)
TJ = 25°C
TJ = -40°C
TJ = 110°C
Forward voltage application rate
(TJ = 110°C, RGK = 1000Ω, VD = rated VDRM)
Turn-on time
Turn-off time
MECHANICAL CHARACTERISTICS
Case:
TO-126
Marking:
Body painted, alpha-numeric
Polarity:
Cathode band
C106 SERIES
SILICON CONTROLLED RECTIFIERS
Symbol
VTM
IGT
VGT
Min. Typ.
--
- 30
- 75
0.4 0.60
0.5 0.75
Max.
2.2
200
500
0.8
1.0
IH
dv/dt
tgt
tq
0.3 -
0.4 -
0.14 -
-8
- 1.2
- 40
3
6
2
-
-
-
Unit
Volts
µA
Volts
mA
V/µs
µs
µs
TO-126
Inches
Millimeters
Min Max Min Max
A 0.425 0.435 10.80 11.050
B 0.295 0.305 7.490 7.750
C 0.095 0.105 2.410 2.670
D 0.020 0.026 0.510 0.660
F 0.115 0.125 2.920 3.180
G 0.091 0.097 2.310 2.460
H 0.050 0.095 1.270 2.410
J 0.015 0.025 0.380 0.640
K 0.595 0.655 15.110 16.640
M 3° TYP
3° TYP
Q 0.148 0.158 3.760 4.010
R 0.045 0.055 1.140 1.400
S 0.025 0.035 0.640 0.890
U 0.145 0.155 3.680 3.940
V 0.040 - 1.020 -
Rev. 20130118


Part Number C106E
Description SILICON CONTROLLED RECTIFIER
Maker Digitron Semiconductors
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C106E Datasheet PDF






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