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Digitron Semiconductors

MCR106-2 Datasheet Preview

MCR106-2 Datasheet

SILICON CONTROLLED RECTIFIERS

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MCR106 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS.
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1)
(TJ = -40 to +110°C, sine wave, 50 to 60Hz, gate open)
MCR106-1
MCR106-2
MCR106-3
MCR106-4
MCR106-5
MCR106-6
MCR106-7
MCR106-8
VDRM
VRRM
30
60
100
200
300
400
500
600
V
On-state RMS current (180° conduction angles, TC = 93°C)
IT(RMS)
4.0
A
Average on-state current (180° conduction angles, TC = 93°C)
IT(AV)
2.55
A
Peak non-repetitive surge current
(half-cycle, sine wave, 60Hz, TJ = 110°C)
Circuit fusing consideration (t = 8.3ms)
ITSM 25
I2t 2.6
A
A2s
Forward peak gate power (pulse width ≤ 1.0µs, TC = 93°C)
PGM 0.5
W
Forward average gate power (t = 8.3ms, TC = 93°C)
Forward peak gate current (pulse width ≤ 1.0µs, TC = 93°C)
PG(AV)
IGM
0.1
0.2
W
A
Peak reverse gate voltage
(pulse width ≤ 1.0µs, TC = 93°C)
VRGM
6.0
V
Operating junction temperature range
TJ -40 to +110
°C
Storage temperature range
Tstg -40 to +150
°C
Mounting torque(2)
- 6.0 In. lb.
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Note 2: Torque rating applies with use of compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink
contact pad are common. For soldering purposes, soldering temperatures should not exceed +200°C. For optimum results, an activated flux is recommended.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Lead solder temperature
(lead length ≥ 1/8” from case, 10s max)
Symbol
RӨJC
RӨJA
TL
Maximum
3.0
75
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
Characteristic
Symbol
OFF CHARACTERISTICS
Peak forward or reverse blocking current
(VAK = Rated VDRM or VRRM, RGK = 1000Ω)
IDRM,
IRRM
Min Typ Max Unit
µA
Rev. 20130115




Digitron Semiconductors

MCR106-2 Datasheet Preview

MCR106-2 Datasheet

SILICON CONTROLLED RECTIFIERS

No Preview Available !

High-reliability discrete products
and engineering services since 1977
TC = 25°C
TC = 110°C
ON CHARACTERISTICS
Peak forward on-state voltage (3)
(ITM = 4.0A peak)
Gate trigger current (continuous dc) (4)
(VAK = 7V, RL = 100Ω)
(TC = -40°C)
Gate trigger voltage (continuous dc)(4)
(VAK = 7V, RL = 100Ω)
Gate non-trigger voltage(4)
(VAK = 12V, RL = 100Ω, T J = 110°C)
Holding current
(VAK = 7V, initiating current = 200mA, gate open)
DYNAMIC CHARACTERISTICS
Critical rate of rise of off-state voltage
(TC = 110°C)
Note 3: Pulse width≤ 1.0ms, duty cycle ≤ 1%.
Note 4: RGK current is not included in measurement.
MECHANICAL CHARACTERISTICS
Case:
TO-126
Marking:
Body painted, alpha-numeric
Pin out:
See below
MCR106 SERIES
SILICON CONTROLLED RECTIFIERS
- - 10
- - 200
VTM - - 2.0
V
dv/dt
- 10 - V/µs
Rev. 20130115


Part Number MCR106-2
Description SILICON CONTROLLED RECTIFIERS
Maker Digitron Semiconductors
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MCR106-2 Datasheet PDF






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