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Digitron Semiconductors

MCR12M Datasheet Preview

MCR12M Datasheet

SILICON CONTROLLED RECTIFIERS

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MCR12D, MCR12M,
MCR12N
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1)
Peak repetitive reverse voltage
(TJ = -40 to +125°C)
MCR12D
MCR12M
MCR12N
VDRM
VRRM
400
600
800
V
On-state RMS current (all conduction angles)
IT(RMS)
12
A
Peak non-repetitive surge current
(one half-cycle, sine wave, 60Hz, TJ = 125°C)
Circuit fusing consideration (t = 8.3ms)
ITSM 100
A
I2t 41 A2s
Peak gate power (pulse width ≤ 1.0µs, TC = 80°C)
PGM 5
W
Average gate power (t = 8.3ms, TC = 80°C)
Peak gate current (pulse width ≤ 1.0µs, TC = 80°C)
PG(AV)
IGM
0.5
2
W
A
Operating temperature range
TJ -40 to +125 °C
Storage temperature range
Tstg -40 to +150
°C
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Maximum lead temperature for soldering purposes
1/8” from case for 10s
Symbol
RӨJC
RӨJA
TL
Maximum
2.0
62.5
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Characteristic
Symbol
OFF CHARACTERISTICS
Peak forward blocking current
Peak reverse blocking current
(VAK = Rated VDRM or VRRM, gate open)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
IDRM,
IRRM
Peak on-state voltage*
(ITM = 24A)
Gate trigger current (continuous dc)
(VD = 12V, RL = 100Ω)
VTM
IGT
Min Typ Max Unit
mA
- - 0.01
- - 2.0
- - 2.2 V
2.0 7.0 20
mA
Rev. 20130108




Digitron Semiconductors

MCR12M Datasheet Preview

MCR12M Datasheet

SILICON CONTROLLED RECTIFIERS

No Preview Available !

MCR12D, MCR12M,
MCR12N
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
Characteristic
Gate trigger voltage (continuous dc)
(VD = 12V, RL = 100Ω)
Holding current
(VD = 12V)
DYNAMIC CHARACTERISTICS
Critical rate of rise of off-state voltage
(VD = rated VDRM, exponential waveform, gate open, TJ = 25°C)
* Pulse width≤ 2.0ms, duty cycle ≤ 2%.
MECHANICAL CHARACTERISTICS
Case:
TO-220AB
Marking:
Body painted, alpha-numeric
Pin out:
See below
Symbol
VGT
IH
dv/dt
Min Typ Max
0.5 0.65 1.0
4.0 25
40
50 200
-
Unit
V
mA
V/µs
Rev. 20130108


Part Number MCR12M
Description SILICON CONTROLLED RECTIFIERS
Maker Digitron Semiconductors
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MCR12M Datasheet PDF





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