MCR2150(A) SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS.
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage(1)
Peak repetitive reverse voltage
MCR2150(A)-4
MCR2150(A)-5
MCR2150(A)-6
MCR2150(A)-7
MCR2150(A)-8
MCR2150(A)-9
MCR2150(A)-10
VRRM
VDRM
200
300
400 Volts
500
600
700
800
Forward current RMS (all conduction angles)
Peak forward surge current (1/2 cycle, sine wave, 60 Hz)
Circuit fusing considerations (t = 8.3ms)
IT(RMS)
ITSM
I2t
15 Amps
160 Amps
100 A2s
Forward peak gate power
PGM 5.0 Watts
Forward average gate power
PG(AV)
0.5 Watts
Forward peak gate current
IGM 2.0 Amps
Operating junction temperature range
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
Note 1: VRRM for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking capability
in a manner such that the voltage supplied exceeds the rated blocking voltage.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum
Unit
Thermal resistance, junction to case
RӨJC 1.5 °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Peak forward blocking current
(Rated VDRM @ TJ = 125°C)
Peak reverse blocking current
(Rated VRRM @ TJ = 125°C)
Peak on-state voltage(2)
(ITM = 10A peak)
(ITM = 30A peak)
Gate trigger current (continuous dc)
(VD = 7.0V, RL = 100Ω)
Gate trigger voltage (continuous dc)
(VD = 7.0V, RL = 100Ω)
Holding current
(VD = 7.0V, RL = 100Ω)
Symbol
IDRM
IRRM
Min Typ. Max
- - 3.0
- - 3.0
VTM - - 3.0
- - 3.75
IGT - - 50
VGT - - 2.5
IH - - 100
Unit
mA
mA
Volts
mA
Volts
mA
Rev. 20130128
