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Digitron Semiconductors

MCR218-2 Datasheet Preview

MCR218-2 Datasheet

SILICON CONTROLLED RECTIFIERS

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MCR218 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS.
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1)
(TJ = -40 to +125°C, gate open)
MCR218-2
MCR218-3
MCR218-4
MCR218-6
MCR218-7
MCR218-8
MCR218-10
VDRM
VRRM
50
100
200
400
500
600
800
V
On-state RMS current (180° conduction angles, TC = 70°C)
IT(RMS)
8.0
A
Peak non-repetitive surge current
(one half-cycle, sine wave, 60Hz, TJ = 125°C)
Circuit fusing consideration (t = 8.3ms)
ITSM 100
A
I2t 26 A2s
Forward peak gate power (pulse width ≤ 1.0µs, TC = 70°C)
PGM 5
W
Forward average gate power (t = 8.3ms, TC = 70°C)
Forward peak gate current (pulse width ≤ 1.0µs, TC = 70°C)
PG(AV)
IGM
0.5
2.0
W
A
Operating temperature range
TJ -40 to +125 °C
Storage temperature range
Tstg -40 to +150
°C
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the
anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Maximum lead temperature for soldering purposes
1/8” from case for 10s
Symbol
RӨJC
TL
Maximum
2.0
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
Characteristic
Symbol
OFF CHARACTERISTICS
Peak forward or reverse blocking current
(VAK = Rated VDRM or VRRM, gate open)
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
ON CHARACTERISTICS
Peak on-state voltage*
(ITM = 16A peak)
VTM
Gate trigger current (continuous dc)
(VD = 12V, RL = 100Ω)
IGT
Gate trigger voltage (continuous dc)
(VD = 12V, RL = 100Ω)
VGT
Min Typ Max Unit
- - 10 µA
- - 2.0 mA
- 1.5 1.8 V
- 10 25 mA
- - 1.5 V
Rev. 20130115




Digitron Semiconductors

MCR218-2 Datasheet Preview

MCR218-2 Datasheet

SILICON CONTROLLED RECTIFIERS

No Preview Available !

MCR218 SERIES
High-reliability discrete products
and engineering services since 1977
Gate non-trigger voltage
(Rated 12V, RL = 100Ω, TJ = 125°C)
Holding current
(VD = 12V, initiating current = 200mA, gate open)
DYNAMIC CHARACTERISTICS
Critical rate of rise of off-state voltage
(VD = rated VDRM, exponential waveform, gate open, TJ = 125°C)
* Pulse width≤ 1.0ms, duty cycle ≤ 2%.
MECHANICAL CHARACTERISTICS
Case:
TO-220AB
Marking:
Body painted, alpha-numeric
Pin out:
See below
SILICON CONTROLLED RECTIFIERS
VGD
IH
dv/dt
0.2 -
- 16
-
30
- 100 -
V
mA
V/µs
Rev. 20130115


Part Number MCR218-2
Description SILICON CONTROLLED RECTIFIERS
Maker Digitron Semiconductors
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MCR218-2 Datasheet PDF






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