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Digitron Semiconductors

MCR22-6 Datasheet Preview

MCR22-6 Datasheet

SILICON CONTROLLED RECTIFIERS

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MCR22 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1)
(RGK = 1K, TJ = -40 to +110°C, sine wave, 50 to 60Hz)
MCR22-2
MCR22-3
MCR22-4
MCR22-5
MCR22-6
MCR22-7
MCR22-8
VDRM
VRRM
50
100
200
300
400
500
600
V
On-state RMS current (180° conduction angles, TC = 80°C)
IT(RMS)
1.5
A
Peak non-repetitive surge current
(half-cycle, sine wave, 60Hz, TA = 25°C)
Circuit fusing consideration (t = 8.3ms)
ITSM 15
A
I2t 0.9 A2s
Forward peak gate power (pulse width ≤ 1.0µs, TA = 25°C)
PGM 0.5
W
Forward average gate power (t = 8.3ms, TA = 25°C)
Forward peak gate current (pulse width ≤ 1.0µs, TA = 25°C)
Reverse peak gate voltage (pulse width ≤ 1.0µs, T A = 25°C)
PG(AV)
IGM
VRGM
0.1
0.2
5.0
W
A
V
Operating temperature range @ rated VRRM and VDRM
TJ -40 to +110 °C
Storage temperature range
Tstg -40 to +150
°C
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Lead solder temperature
(lead length ≥ 1/16” from case, 10s max)
Symbol
RӨJC
RӨJA
TL
Maximum
50
160
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Characteristic
Symbol
OFF CHARACTERISTICS
Peak forward or reverse blocking current
(VAK = Rated VDRM or VRRM, RGK = 1000 Ω)
TC = 25°C
TC = 110°C
IDRM,
IRRM
ON CHARACTERISTICS
Peak forward on-state voltage*
(ITM = 1A)
VTM
Min Typ Max Unit
- - 10 µA
- - 200
- 1.2 1.7 V
Rev. 20130115




Digitron Semiconductors

MCR22-6 Datasheet Preview

MCR22-6 Datasheet

SILICON CONTROLLED RECTIFIERS

No Preview Available !

High-reliability discrete products
and engineering services since 1977
Gate trigger current (continuous dc) (2)
(VAK = 6V, RL = 100Ω)
TC = 25°C
TC = -40°C
Gate trigger voltage (continuous dc) (2)
(VAK = 7V, RL = 100Ω)
TC = 25°C
TC = -40°C
Gate non-trigger voltage*
(VAK = 12V, RL = 100Ω, T C = 110°C)
Holding current
(VAK = 12V, gate open, initiating current = 200mA)
TC = 25°C
TC = -40°C
DYNAMIC CHARACTERISTICS
Critical rate of rise of off-state voltage (TC = 110°C)
* Pulse width≤ 1.0ms, duty cycle ≤ 1%.
Note 2: RGK current not included in measurement.
MECHANICAL CHARACTERISTICS
Case:
TO-92
Marking:
Body painted, alpha-numeric
Pin out:
See below
MCR22 SERIES
SILICON CONTROLLED RECTIFIERS
IGT
VGT
VGD
IH
dv/dt
-
30 200
µA
- - 500
-
-
0.1
-
-
-
-
-
-
0.8
1.2
-
2.0 5.0
- 10
V
V
mA
25 - V/µs
Rev. 20130115


Part Number MCR22-6
Description SILICON CONTROLLED RECTIFIERS
Maker Digitron Semiconductors
PDF Download

MCR22-6 Datasheet PDF






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