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Digitron Semiconductors

MCR220-9 Datasheet Preview

MCR220-9 Datasheet

SILICON CONTROLLED RECTIFIERS

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MCR220-5, MCR220-7,
MCR220-9
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS.
Characteristic
Symbol
Min
Typ
Max
OFF CHARACTERISTICS
Peak forward or reverse blocking current(2)
(VAK = Rated VDRM or VRRM, RGK = 1kΩ)
TC = 25°C
TC = 110°C
ON CHARACTERISTICS
IDRM,
IRRM
-
-
- 10
- 500
Peak forward on-state voltage
(ITM = 16A, pulse width ≤ 1ms, duty cycle ≤ 2%)
Gate trigger current (continuous dc)(3)
(VD = 12V, RL = 100Ω)
Gate trigger voltage (continuous dc) (3)
(VD = 12V, RL = 100Ω)
Gate non-trigger voltage
(VD = 12V, RL = 100Ω, TJ = 110°C)
Holding current
(VD = 12V, gate open, initiating current = 200mA)
Gate controlled turn-on time
(VD = Rated VDRM, ITM = 16A, IG = 2mA)
DYNAMIC CHARACTERISTICS
VTM - 1.7 2.0
IGT - 30 200
VGT - 0.5 1.5
VGD 0.1
-
-
IH - - 6.0
tgt - 1.0 -
Critical rate of rise of off-state voltage
(VD = rated VDRM, RGK = 1kΩ, T J = 110°C, exponential waveform)
dv/dt
-
10
-
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
RӨJC
Maximum
2.0
Unit
µA
V
µA
V
V
mA
µs
V/µs
Unit
°C/W
Rev. 20130128




Digitron Semiconductors

MCR220-9 Datasheet Preview

MCR220-9 Datasheet

SILICON CONTROLLED RECTIFIERS

No Preview Available !

MCR220-5, MCR220-7,
MCR220-9
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIERS
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Characteristic
Symbol
Min. Typ.
OFF CHARACTERISTICS
Peak forward or reverse blocking current
(VAK = Rated VDRM or VRRM, gate open)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
IDRM or IRRM
-
-
-
-
Peak forward on-state voltage
(ITM = 24A peak)
Gate trigger current (continuous dc)
(VD = 12 Vdc, RL = 100 Ω)
VTM - 1.7
IGT - 5.0
Gate trigger voltage (continuous dc)
(VD = 12 Vdc, RL = 100 Ω)
Gate non-trigger voltage
(VD = Rated VDRM, RL = 100 Ω, TJ = 125°C)
Holding current
(VD = 12Vdc)
VGT - 0.7
VGD 0.2 -
IH - 6.0
Turn on time
(ITM = 12A, IGT = 40mAdc, VD = rated VDRM)
Turn-off time (VD = rated VDRM)
(ITM = 12A, IR = 12A)
(ITM = 12A, IR = 12A, TJ = 125°C)
DYNAMIC CHARACTERISTICS
tgt - 1.0
tq
- 15
- 35
Critical rate of rise of off-state voltage exponential
(VD = rated VDRM, TJ = 125°C)
dv/dt
- 50
Max.
10
2.0
2.2
30
1.5
-
40
2.0
-
-
-
Unit
µA
mA
Volts
mA
Volts
Volts
mA
µs
µs
V/µs
Rev. 20130128


Part Number MCR220-9
Description SILICON CONTROLLED RECTIFIERS
Maker Digitron Semiconductors
PDF Download

MCR220-9 Datasheet PDF






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