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DTP10N60FSJ Datasheet Preview

DTP10N60FSJ Datasheet

N-Channel Super Junction Power MOSFET

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DTP10N60SJ/DTP10N60FSJ/DTU10N60SJ/DTL10N60SJ
www.din-tek.jp
N-Channel 600V (D-S) Super Junction Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
600
RDS(on) max. at 25 °C (Ω)
Qg max. (nC)
Qgs (nC)
Qgd (nC)
VGS = 10 V
35
3
3.7
Configuration
Single
0.47
TO-220AB
TO-220 FULLPAK
FEATURES
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
TO-252
TO-251
D
G
GD S
Top View
GDS
Top View
GDS
Top View
GDS
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current a
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt d
Soldering Recommendations (Peak Temperature) c
TJ = 125 °C
for 10 s
EAS
PD
TJ, Tstg
dV/dt
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 4.5 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
1
LIMIT
600
± 30
10
6.1
30
1.62/1.3/0.2
121
83/83/31
-55 to +150
50
3.1
304
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C




Din-Tek

DTP10N60FSJ Datasheet Preview

DTP10N60FSJ Datasheet

N-Channel Super Junction Power MOSFET

No Preview Available !

DTP10N60SJ/DTP10N60FSJ/DTU10N60SJ/DTL10N60SJ
www.din-tek.jp
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
82
0.7
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
VDS
ΔVDS/TJ
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Related a
Effective Output Capacitance, Time
Related b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
RDS(on)
gfs
Ciss
Coss
Crss
Co(er)
Co(tr)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 520 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 5 A
VDS = 30 V, ID = 5 A
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
VDS = 0 V to 520 V, VGS = 0 V
VGS = 10 V
ID = 5 A, VDS = 520 V
VDD = 520 V, ID = 5 A,
VGS = 10 V, Rg = 9.1 Ω
f = 1 MHz, open drain
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
D
Pulsed Diode Forward Current
integral reverse
G
ISM p - n junction diode
S
MIN. TYP.
600 -
- 0.65
2-
--
--
--
--
- 0.47
- 16
- 680
- 140
-5
- 63
- 113
- 38
-4
- 4.5
- 13
- 11
- 81
- 25
- 3.5
--
--
Diode Forward Voltage
VSD
TJ = 25 °C, IS = 5 A, VGS = 0 V
--
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
trr
Qrr
IRRM
TJ = 25 °C, IF = IS = 5 A,
dI/dt = 100 A/μs, VR = 400 V
- 270
- 3.3
- 30
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
MAX. UNIT
-
-
4
± 100
±1
1
10
-
-
V
V/°C
V
nA
μA
μA
Ω
S
-
-
-
pF
-
-
56
- nC
-
25
35
ns
90
40
-Ω
10
A
30
1.5 V
- ns
- μC
-A
2


Part Number DTP10N60FSJ
Description N-Channel Super Junction Power MOSFET
Maker Din-Tek
Total Page 11 Pages
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