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2DB1182Q Datasheet

32V PNP MEDIUM POWER TRANSISTOR

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Features
BVCEO > -32V
IC = -2A High Continuous Collector Current
ICM = -3A Peak Pulse Current
Epitaxial Planar Die Construction
Low Collector-Emitter Saturation Voltage
Ideal for Medium Power Switching or Amplification Applications
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
2DB1182Q
32V PNP MEDIUM POWER TRANSISTOR IN TO252
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Plated Leads, Solderable
per MIL-STD-202, Method 208 e3
Weight: 0.34 grams (Approximate)
TO252 (DPAK)
Top View
C
C
BB
EE
Device Schematic
Pin Out Configuration
Top view
Ordering Information (Note 4)
Product
2DB1182Q-13
Compliance
AEC-Q101
Marking
2DB1182Q
Reel Size (inches)
13
Tape Width (mm)
16
Quantity per Reel
2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YYWW
2DB1182Q
2DB1182Q = Product Type Marking Code
= Manufacturers’ code marking
YYWW = Date Code Marking
YY = Last Digit of Year, (ex: 14 = 2014)
WW = Week Code 01-52
2DB1182Q
Document number: DS35651 Rev. 3 - 2
1 of 6
www.diodes.com
November 2014
© Diodes Incorporated


Diodes Semiconductor Electronic Components Datasheet

2DB1182Q Datasheet

32V PNP MEDIUM POWER TRANSISTOR

No Preview Available !

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
-40
-32
-5
-2
-3
2DB1182Q
Unit
V
V
V
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Power Dissipation @TL = +25°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Symbol
PD
PD
RθJA
RθJL
TJ, TSTG
Value
1.2
15
104
8.3
-55 to +150
Unit
W
W
°C/W
°C/W
°C
ESD Ratings (Note 7)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
Note:
5. For a device mounted with the exposed collector pad on minimum recommended pad (MRP) layout 1oz copper that is on a single-sided
1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristics
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001 0.0001
0.001
D = 0.9
RJA(t) = r(t) * RJA
RJA = 110°C/W
P(pk)
t1
t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t1/t2
0.01 0.1
1
10 100 1,000 10,000
t1, PULSE DURATION TIME (s)
Figure 1 Transient Thermal Response
2DB1182Q
Document number: DS35651 Rev. 3 - 2
2 of 6
www.diodes.com
November 2014
© Diodes Incorporated


Part Number 2DB1182Q
Description 32V PNP MEDIUM POWER TRANSISTOR
Maker Diodes
Total Page 6 Pages
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